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Terahertz generators (IMPATT diodes)

TeraSense series of IMPATT diodes are silicon double drift diodes with a 0.6 um transit region, mounted on copper heat sink. The layers in double-drift diodes are: a heavily doped (p+)-region, a moderately doped pregion, a moderately doped n-region, and a heavily doped (n+)-region. The (p+)- and (n+)- regions allow ohmic electrical contacts to be made to the external circuit. The device relies on negative resistance to generate and sustain an oscillation.

Terasense is now offering its upgraded version of IMPATT diode. The upgraded IMPATT diode is outfitted with a protective isolator, which significantly improves output power stability. From now on you can order IMPATT diode with either rigidly fixed horn antenna or WR- flange of your choice. Typical output rfpower of IMPATT diode with optimized frequency @ 100 GHz can reach up to 80 mW.

Upgraded IMPATT Diode Specifications

IMPATT diode @ 100 GHz

(with case and current source)

Frequency: optimized at ~ 100 GHz

Protective isolator
TTL Modulation (1us rise/fall time)
High power (~80 mW output rfpower)
Conical horn antenna (rigidly fixed)
—- or —–

Flange type (WR-8 or WR-10)

IMPATT diode @ 140 GHz

….(with case and current source)

Frequency: optimized at ~ 140 GHz

Protective isolator
TTL Modulation (1us rise/fall time)
Conical horn antenna (rigidly fixed)
—- or —–

Flange type (WR-6)
Input power 2W (external power supply (24 V) ensures stable amperage input)
Typical linewidth can be narrowed down to 1 MHz