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The world’s first high speed sub-THz semiconductor imaging camera – Terahertz imaging cameras

Sub-Terahertz Imaging Solutions for Science and Industry
Terasense has developed an original patent-protected technology for making a new type of semiconductor detectors for sub-THz rays operating at room temperatures. The detectors can be combined into a compact and rather inexpensive sensor array (similar to CCD/CMOS sensors in a photo camera). The Company is developing imaging applications for THz and sub-THz frequency ranges based on its sensors.

The detectors proposed by Terasense have good responsivity comparable with other available detectors working in sub-THz range (0.1 – 0.7 THz), but in contrast they are low-cost, has uniform pixel-to-pixel sensitivity (pixel-to-pixel deviation of the responsivity is less than 20% ) and they can be easily produced in large quantities in the form of 2D array thanks to compatibility of the Terasense technology with mass semiconductor manufacturing lines. Therefore, the detectors are suitable for use in the sub-THz camera without any moving parts.

Tera-256
» 256 pixels (16×16 array)

» 1.5 x 1.5mm pixel size

» 50 kV/W reponsitivity with NEP=1nW/\sqrt{Hz}

» 10cm x 10cm x 5.5cm device size

Tera-1024
» 1024 pixels (32 x 32 array)

» 1.5 x 1.5 mm pixel size

» 50 kV/W responsivity with NEP=1 nW/\sqrt{Hz}

» 10 cm x 10 cm x 5.5 cm device size

Tera-4096
» 4096 pixels (64 x 64 array)

» 5 x 1.5 mm pixel size

» 50 kV/W responsivity with NEP=1 nW/\sqrt{Hz}

» 20 cm x 20 cm x 10 cm device size

Applications

Beam profiling systems
Imaging of beams from TDS and FDS spectroscopy systems
Terahertz homeland security and screening
Hidden Objects and Defects Identification
Medical Diagnostics
Petrol and Oil quality Control
OEM Applications

TeraSense series of IMPATT diodes are silicon double drift diodes with a 0.6 um transit region, mounted on copper heat sink. The layers in double-drift diodes are: a heavily doped (p+)-region, a moderately doped pregion, a moderately doped n-region, and a heavily doped (n+)-region. The (p+)- and (n+)- regions allow ohmic electrical contacts to be made to the external circuit. The device relies on negative resistance to generate and sustain an oscillation.

Terasense is now offering its upgraded version of IMPATT diode. The upgraded IMPATT diode is outfitted with a protective isolator, which significantly improves output power stability. From now on you can order IMPATT diode with either rigidly fixed horn antenna or WR- flange of your choice. Typical output rfpower of IMPATT diode with optimized frequency @ 100 GHz can reach up to 80 mW.

Upgraded IMPATT Diode Specifications

IMPATT diode @ 100 GHz

(with case and current source)

Frequency: optimized at ~ 100 GHz

Protective isolator
TTL Modulation (1us rise/fall time)
High power (~80 mW output rfpower)
Conical horn antenna (rigidly fixed)
—- or —–

Flange type (WR-8 or WR-10)

IMPATT diode @ 140 GHz

….(with case and current source)

Frequency: optimized at ~ 140 GHz

Protective isolator
TTL Modulation (1us rise/fall time)
Conical horn antenna (rigidly fixed)
—- or —–

Flange type (WR-6)
Input power 2W (external power supply (24 V) ensures stable amperage input)
Typical linewidth can be narrowed down to 1 MHz

Ultrafast detectors by TeraSense consistently demonstrate response time of less than 150 ps. This was confirmed by direct observation of its impulse response function. The detector was excited by 200 nJ 1 ps laser pulse with a broad spectrum ranging from 0.1 to 3 THz, and its response was recorded by a high speed oscilloscope. The response function shows rise and fall times of 150 ps limited by the oscilloscope 4 GHz bandwidth.

The measured short response time makes it possible to use our detectors for straightforward investigation of fast transient processes in THz-science and telecommunication.

TeraSense® detectors are sensitive in a wide frequency range. However their frequency response is not continuous, but consists if multiple bands (peak structures). Positions of the peaks in responsivity curve can be tuned at manufacturing stage to suit specific client’s requirements.

Our ultrafast high-sensitive sub-THz detectors are meant for exploring fast-changing and transient sub-THz signals and impulses. Terasense detectors are actually expediting the advent of ultra-high-speed wireless telecommunication networks that is about to happen in the nearest future. Terasense ultrafast detectors are also an ultimate tool for characterization, calibration and tuning of impulse sub-THz sources.

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